smd led sizes 5730 white

                                                                                          Smd led sizes 5730 WHITE

5730 LED CHIP packaging as the core device of the LED street lamp, the performance of the LED chip needs to be improved by the LED packaging process to achieve the effects of light efficiency, life, stability, optical design, and heat dissipation. Due to the different led chip structure, the corresponding packaging process also has a big difference.As the key component in LED street lamps, 5730 LED chip packaging plays an essential role in improving LED chip performance. The efficiency, lifespan, stability, optical design, and heat dissipation characteristics are all significantly influenced by LED packaging processes. It's important to note that different LED chip structures require different packaging processes.

In the positive and vertical structures of LED chips, Gallium Nitride (GaN) interacts with phosphor and silica gel. In contrast, the flip-chip structure sees sapphire in contact with phosphor and silica gel. GaN has a refractive index of about 2.4, sapphire is at 1.8, phosphor at 1.7, and silica gel usually varies between 1.4-1.5. Reflecting these indices, the total reflection critical angles of sapphire/(silica gel + phosphor) are larger (51.1-70.8°) compared to GaN/(silica gel + phosphor) (36.7-45.1°). 

As a result, light emitted from the sapphire surface in the packaging structure encounters a larger critical angle when passing through the silica gel and phosphor interface, which substantially reduces total reflection loss of light. 

Additionally, differences in LED chip structure design lead to variances in current density and voltage, significantly impacting LED chip light efficiency. As an illustration, conventional, positively-loaded chips usually have a voltage exceeding 3.5V. Meanwhile, the flip-chip structure's electrode design ensures more uniform current distribution, thereby reducing the LED chip voltage to 2.8V-3.0V. As a consequence, the light efficiency of flip chips surpasses that of positive chips by approximately 16-25%.

The positive and vertical structures of the led chip are GaN in contact with phosphor and silica gel, while the flip-chip structure is sapphire in contact with phosphor and silica gel. The refractive index of GaN is about 2.4, the refractive index of sapphire is 1.8, the refractive index of phosphor is 1.7, and the refractive index of silica gel is usually 1.4-1.5. The total reflection critical angles of sapphire/(silica gel + phosphor) and GaN/(silica gel + phosphor) are 51.1-70.8°and 36.7-45.1°, respectively, and the light emitted from the sapphire surface in the package structure passes through the silica gel and phosphor interface. The critical angle of total reflection of the layer is larger, and the total reflection loss of light is greatly reduced. At the same time, the design of led chip structure is different, resulting in different current density and voltage, which has a significant effect on the light efficiency of LED chips. For example, the conventional positive-loading chip usually has a voltage of more than 3.5V, and the flip-chip structure has a more uniform current distribution due to the design of the electrode structure, so that the voltage of the LED chip is greatly reduced to 2.8V-3.0V, therefore,In the case, the light effect of the flip chip is about 16-25% higher than that of the positive chip.

                                                                                  Specification of  Smd led sizes 5730 WHITE